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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-220C package www..com *Complement to type BD895/897/899/901 *DARLINGTON APPLICATIONS *For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD896/898/900/902 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BD896 VCBO Collector-base voltage BD898 BD900 BD902 BD896 VCEO Collector-emitter voltage BD898 BD900 BD902 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current-DC Base current Total power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -300 70 2 150 -65~150 V A mA W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD896 Collector-emitter breakdown voltage BD898 IC=-100mA, IB=0 BD900 BD902 VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD896 BD898 ICBO Collector cut-off current BD900 BD902 BD896 BD898 ICEO Collector cut-off current BD900 BD902 IEBO hFE VEC ton toff Emitter cut-off current DC current gain Diode forward voltage Turn-on time Turn-off time VCE=-40V, IB=0 VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IE=-8A IC=-3A ; IB1=-IB2=-12mA VBE=3.5V;RL=10B;tp=20s IC=-3A ,IB=-12mA IC=-3A ; VCE=-3V VCB=-45V, IE=0 TC=100 VCB=-60V, IE=0 TC=100 VCB=-80V, IE=0 TC=100 VCB=-100V, IE=0 TC=100 VCE=-30V, IB=0 VCE=-30V, IB=0 CONDITIONS www..com BD896/898/900/902 SYMBOL MIN -45 -60 TYP. MAX UNIT V(BR)CEO V -80 -100 -2.5 -2.5 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 -0.2 -2.0 mA V V -0.5 mA -2 750 -3.5 1 5 mA V s s THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.79 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE www..com BD896/898/900/902 Fig.2 Outline dimensions 3 |
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